pd 1.024d series PVD13 microelectronic power ic relay single-pole, 500ma, 0-100v dc bosfet ? photovoltaic relay general description the photovoltaic dc relay (pvd) is a single-pole, nor- mally open solid state replacement for electro-me- chanical relays used for general purpose switching of analog signals. it utilizes as an output switch a unique bidirectional (ac or dc) mosfet power ic termed a bosfet. the bosfet is controlled by a photovoltaic generator of novel construction, which is energized by radiation from a dielectrically isolated light emitting di- ode (led). the pvd overcomes the limitations of both conven- tional and reed electromechanical relays by offering the solid state advantages of long life, high operating speed, low pick-up power, bounce-free operation, low thermal voltages and miniaturization. these advan- tages allow product improvement and design innova- tions in many applications such as process control, multiplexing, telecommunications, automatic test equipment and data acquisition. the pvd can switch analog signals from thermocouple level to 100 volts peak dc. signal frequencies into the rf range are easily controlled and switching rates up to 2khz are achievable. the extremely small thermally generated offset voltages allow increased measure- ment accuracies. unique silicon technology developed by international rectifier forms the heart of the pvd. the monolithic bosfet contains a bidirectional n-channel power mosfet output structure. in addition, this power ic chip has input circuitry for fast turn-off and gate protec- tion functions. this section of the bosfet chip utilizes both bipolar and mos technology to form npn transis- tors, p-channel mosfets, resistors, diodes and ca- pacitors. the photovoltaic generator similarly utilizes a unique international rectifier alloyed multijunction structure. the excellent current conversion efficiency of this tech- nique results in the very fast response of the pvd mi- croelectronic power ic relay. this advanced semiconductor technology has created a radically new control device. designers can now de- velop switching systems to new standards of electrical performance and mechanical compactness. PVD13 features bosfet power ic n n n n n 10 10 oper ations n n n n n 300sec operating time n n n n n 3 milliwatts pick-up power n n n n n 1000v/sec dv/dt n n n n n bounce-free n n n n n 8-pin dip package n n n n n -40c to 85c n n n n n ul recognized n n n n n part identification part number operating sensitivity off-state voltage (dc) resistance PVD1352 10 8 ohms 0 C 100v 5 ma PVD1354 10 10 ohms (bosfet is a trademark of international rectifier)
series PVD13 ? bosfet ? photovoltaic relay input characteristics PVD1352 PVD1354 units minimum control current (see figures 1 and 2) dc for 300ma continuous load current 2.0 ma@25c for 400ma continuous load current 5.0 ma@40c for 150ma continuous load current 5.0 ma@85c maximum control current for off-state resistance at 25c 10 a(dc) control current range (caution: current limit input led. see figure 6) 2.0 to 25 ma(dc) maximum reverse voltage 7.0 v(dc) electrical specifications (-40 c t a +85 c unless otherwise specified ) general characteristics (PVD1352 and PVD1354) units dielectric strength: input-output 2500 v rms insulation resistance: input-output @ 90v dc 10 12 @ 25c - 50% rh w maximum capacitance: input-output 1.0 pf max. pin soldering temperature (1.6mm below seating plane, 10 seconds max.) +260 ambient temperature range: operating -40 to +85 c storage -40 to +100 output characteristics PVD1352 PVD1354 units operating voltage range 0 to + 100 v (peak) maxiumum load current 40c (see figures 1and 2) 500 ma (dc) response time @25c (see figures 7 and 8) max. t (on) @ 12ma control, 50 ma load, 100 vdc 300 s max. t (off) @ 12ma control, 50 ma load, 100 vdc 50 s max. on-state resistance 25c (pulsed) (fig. 4) 200 ma load, 5ma control 1.5 w min. off-state resistance 25c @ 80 vdc (see figure 5) 10 8 10 10 w max. thermal offset voltage @ 5.0ma control 0.2 volts min. off-state dv/dt 1000 v/s output capacitance 12 pf @ 50vdc
series PVD13 ? bosfet ? photovoltaic relay max. load current (ma) figure 1. current derating curves figure 2. typical control current requirements figure 3.typical on characteristics rds (on) (normalized to 25c) i led (ma) ambient temperature (c) load current (ma) ambient temperature (c) v ds (volts) load current (ma) figure 4. typical normalized on-resistance
series PVD13 ? bosfet ? photovoltaic relay i d off/i d off 25c figure 5. normalized off-state leakage figure 6. input characteristics (current controlled) figure 7.typical delay times figure 8. delay time definitions led forward voltage drop (volts dc) input current (ma) ambient temperature (c) i led (ma) delay time (microseconds)
series PVD13 ? bosfet ? photovoltaic relay typical capacitance (picofarads) wiring diagram figure 10. typical output capacitance v ds drain to source voltage normalized transfer ratio figure 9. typical control threshold and transfer ratio ambient temperature c normalized control threshold current
series PVD13 ? bosfet ? photovoltaic relay case outline (dimensions in millimeters (inches)) mechanical specifications: package: 8-pin dip tolerances: .015 (.38) unless otherwise specified case material: molded epoxy weight: .07 oz. (2 gr.) world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 713215 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ku, tokyo, japan 171 tel: ++ 81 3 3983 0641 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: ++ 65 221 8371 http://www/irf.com/ data and specifications subject to change without notice. 9/96
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